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Akiyama, Mitsunaga*; Katakura, Fumishige*; Kawasaki, Nobuo*; Nemoto, Toshiyuki*; Tsuruoka, Takuya*; Adachi, Masaaki*; Ishizuki, Shigeru*; Kume, Etsuo
JAERI-Data/Code 2003-009, 307 Pages, 2003/07
JAERI-Data-Code-2003-009.pdf:10.37MB
Several computer codes in the nuclear field have been vectorized, parallelized and transported on the supar computer system at Center for Promotion of Computational Science and Engineering in Japan Atomic Energy Research Institute. We dealt with 10 codes in fiscal 2001. In this report, the parallelization of Newtron Radiography for 3 dimensional CT code NR3DCT, the vectorization of Unsteady-state heat conduction code THERMO3D, the porting of initial program of MHD simulation, the tuning of Heat And Mass Balance Analysis Code HAMBAC, the porting and parallelization of Monte Carlo N-Particle transport code MCNP4C3, the porting and parallelization of Monte Carlo N-Particle Transport code system MCNPX2.1.5, the porting of code CINAC-V4, the porting of Assisted Model Building with Energy Refinement Amber5 code system, the part of additional VisLink library Multidimensional Two-fluid model code ACD3D and the porting of experiment data processing code for GS8500 to SR8000 are described.
Lee, K. K.; Nishijima, Toshiji*; Oshima, Takeshi; Jamieson, D. N.*
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.324 - 328, 2001/07
Times Cited Count：5 Percentile：38.97(Instruments & Instrumentation)Investigation of oxide charge trapping and interface state generation in SiO
grown on 6H-SiC was performed using ion beam induced charge (IBIC), electroluminescence (EL) and the high frequency capacitance-voltage (CV) method. A large flatband voltage shift in CV measurements indicated a high density of positive charges trapped near the SiC/SiO interface. These trapped charges were related to defects either existing in the oxide or generated during alpha particle irradiation. EL indicated trap levels at 1.36, 1.6, 2.3 and 2.9 eV. Levels at 1.36 and 2.3 eV are defects existing in the SiC substrate, while the other two remaining levels are due to defects in the oxide. These defects affected the radiation hardness of SiC electronic devices. Oxide rupture caused by alpha particle irradiation of the metal-oxide-p-type SiC device is observed.
-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structuresYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu
Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00
Times Cited Count：1 Percentile：11.83(Materials Science, Multidisciplinary)no abstracts in English
Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*
Journal of Applied Physics, 80(1), p.282 - 287, 1996/07
Times Cited Count：22 Percentile：70.69(Physics, Applied)no abstracts in English
Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00
no abstracts in English
Yoshikawa, Masahito; Ito, Hisayoshi; Oshima, Takeshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), p.741 - 744, 1996/00
no abstracts in English
Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito
Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00
no abstracts in English
*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*
Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.133 - 134, 1993/00
no abstracts in English
Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Amorphous and Crystalline Silicon Carbide IV, p.393 - 398, 1992/00
no abstracts in English
Yoshikawa, Masahito; Ito, Hisayoshi; Morita, Yosuke; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Journal of Applied Physics, 70(3), p.1309 - 1312, 1991/08
Times Cited Count：38 Percentile：85.12(Physics, Applied)no abstracts in English
